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NP55N055SUG
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
20
18
16
14
12
10
8
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
C iss
1000
C oss
6
4
2
0
V GS = 10 V
I D = 28 A
Pulsed
100
V GS = 0 V
f = 1 MHz
C rss
-100
-50
0
50
100
150
200
0.1
1
10
100
T ch - Channel Temperature - °C
SWITCHING CHARACTERISTICS
V DS - Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
1000
50
10
V DD = 28 V
V GS = 10 V
R G = 0 ?
45
40
V DD = 44 V
28 V
11 V
8
100
t d(off)
35
30
V GS
6
t d(on)
25
10
t r
t f
20
15
4
1
10
5
0
V DS
I D = 55 A
2
0
0.1
1
10
100
0
10
20
30
40
50
60
70
1000
100
I D - Drain Current - A
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100
Q G - Gate Charge - nC
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
10
1
V GS = 10 V
0V
0.1
0.01
Pulsed
10
V GS = 0 V
di/dt = 100 A/ μ s
0
0.5
1
1.5
0.1
1
10
100
V F(S-D) - Source to Drain Voltage - V
Data Sheet D16863EJ2V0DS
I F - Diode Forward Current - A
5
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